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Semiconductor materials are insulators at absolute zero temperature that conduct electricity in a limited way at room temperature (see also Semiconductor). The defining property of a semiconductor material is that it can be doped with impurities that alter its electronic properties in a controllable way.

Because of their application in devices like transistors (and therefore computers) and lasers, the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science.

The most commonly used semiconductor materials are crystalline inorganic solids. These materials can be classified according to the periodic table groups from which their constituent atoms come.

The group III nitrides have high tolerance to ionizing radiation, making them suitable for radiation-hardened electronics.

• Group IV elemental semiconductors
  • Diamond (C)
  • Silicon (Si)
  • Germanium (Ge)

• Group IV compound semiconductors
  • Silicon carbide (SiC)
  • Silicon germanide (SiGe)

• III-V semiconductors
  • Aluminium antimonide (AlSb)
  • Aluminium arsenide (AlAs)
  • Aluminium nitride (AlN)
  • Aluminium phosphide (AlP)
  • Boron nitride (BN)
  • Boron phosphide (BP)
  • Boron arsenide (BAs)
  • Gallium antimonide (GaSb)
  • Gallium arsenide (GaAs)
  • Gallium nitride (GaN)
  • Gallium phosphide (GaP)
  • Indium antimonide (InSb)
  • Indium arsenide (InAs)
  • Indium nitride (InN)
  • Indium phosphide (InP)

• III-V ternary semiconductor alloys
  • Aluminium gallium arsenide (AlGaAs, Al_xGa_1-xAs)
  • Indium gallium arsenide (InGaAs, In_xGa_1-xAs)
  • Aluminium indium arsenide (AlInAs)
  • Aluminium indium antimonide (AlInSb)
  • Gallium arsenide nitride (GaAsN)
  • Gallium arsenide phosphide (GaAsP)
  • Aluminium gallium nitride (AlGaN)
  • Aluminium gallium phosphide (AlGaP)
  • Indium gallium nitride (InGaN)
  • Indium arsenide antimonide (InAsSb)
  • Indium gallium antimonide (InGaSb)

• III-V quaternary semiconductor alloys
  • Aluminium gallium indium phosphide (AlGaInP, also InAlGaP, InGaAlP, AlInGaP)
  • Aluminium gallium arsenide phosphide (AlGaAsP)
  • Indium gallium arsenide phosphide (InGaAsP)
  • Aluminium indium arsenide phosphide (AlInAsP)
  • Aluminium gallium arsenide nitride (AlGaAsN)
  • Indium gallium arsenide nitride (InGaAsN)
  • Indium aluminium arsenide nitride (InAlAsN)

• III-V quinary semiconductor alloys
  • Gallium indium nitride arsenide antimonide (GaInNAsSb)

• II-VI semiconductors
  • Cadmium selenide (CdSe)
  • Cadmium sulfide (CdS)
  • Cadmium telluride (CdTe)
  • Zinc oxide (ZnO)
  • Zinc selenide (ZnSe)
  • Zinc sulfide (ZnS)
  • Zinc telluride (ZnTe)

• II-VI ternary alloy semiconductors
  • Cadmium zinc telluride (CdZnTe, CZT)
  • Mercury cadmium telluride (HgCdTe)
  • Mercury zinc telluride (HgZnTe)
  • Mercury zinc selenide (HgZnSe)

• I-VII semiconductors
  • Cuprous chloride (CuCl)

• IV-VI semiconductors
  • Lead selenide (PbSe)
  • Lead sulfide (PbS)
  • Lead telluride (PbTe)
  • Tin sulfide (SnS)
  • Tin telluride (SnTe)

• IV-VI ternary semiconductors
  • lead tin telluride (PbSnTe)
  • Thallium tin telluride (Tl₂SnTe₅)
  • Thallium germanium telluride (Tl₂GeTe₅)

• V-VI semiconductors
  • Bismuth telluride (Bi₂Te₃)

• II-V semiconductors
  • Cadmium phosphide (Cd₃P₂)
  • Cadmium arsenide (Cd₃As₂)
  • Cadmium antimonide (Cd₃Sb₂)
  • Zinc phosphide (Zn₃P₂)
  • Zinc arsenide (Zn₃As₂)
  • Zinc antimonide (Zn₃Sb₂)

• Layered semiconductors
  • Lead(II) iodide (PbI₂)
  • Molybdenum disulfide (MoS₂)
  • Gallium Selenide (GaSe)
  • Tin sulfide (SnS)
  • Bismuth Sulfide (Bi₂S₃)

• Others
  • Copper indium gallium selenide (CIGS)
  • Platinum silicide (PtSi)
  • Bismuth(III) iodide (BiI₃)
  • Mercury(II) iodide (HgI₂)
  • Thallium(I) bromide (TlBr)

• Miscellaneous oxides
  • Titanium dioxide: anatase (TiO₂)
  • Copper(I) oxide (Cu₂O)
  • Copper(II) oxide (CuO)
  • Uranium dioxide (UO₂)
  • Uranium trioxide (UO₃)

• Organic semiconductors

• Magnetic semiconductors